| 摘要 |
A method for manufacturing an image sensor is provided to improve insulation property and simplify a manufacturing process by reducing the number of pattern processes by using a conventional mask. A first photoresist pattern(P11) having an opening is formed at a region where a first insulation region(15) is to be formed, wherein the first insulation region is formed between the region where a first align key(13) is formed on a semiconductor substrate(10), and first photodiodes. After forming the first insulation region using the first photoresist pattern as a mask, the first align key is formed. A second photoresist pattern is formed on the semiconductor substrate, and a first photodiode is formed by implanting dopant using the second photoresist pattern as the mask.
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