METHOD OF MANUFACTURING A NON-VOLATILE MEMORY DEVICE

摘要

A method for fabricating an NVM(non-volatile memory) device is provided to suppress a shift of a program threshold voltage between adjacent wordlines by minimizing the interference effect between the adjacent wordlines. A semiconductor substrate(400) having a plurality of wordlines and select lines is formed. An ion implantation process is performed to form junction regions(410) on the semiconductor substrate between the wordlines, between the wordline and the select line and between the select lines. An insulation layer(430) is formed in a manner that voids(420) are formed between the wordlines and between the select line and the wordline. The insulation layer between the select lines is etched to form spacers(430a) on the sidewall between the select lines.