| 摘要 |
<p>A multiple exposing method and a photo mask forming method using the same are provided to utilize the area of a semiconductor substrate more effectively by forming a diagonal pattern. A photoresist is formed on a substrate. A region(100) where a predetermined diagonal pattern is to be formed is divided into plural first regions(102). The photoresist of the first regions is exposed to an electron beam. The diagonal pattern forming region is overlapped with the first regions, and divided into plural second regions(104) which are different from the first regions. The photoresist of the second regions is exposed to an electron beam.</p> |
