| 摘要 |
A method for manufacturing a TFT substrate is provided to perform an impurity doping process simultaneously in the active layer of a TFT and a lower storage electrode included into a storage capacitor, thereby simplifying the process. A method for manufacturing a TFT(Thin Film Transistor) substrate comprises the following steps of: forming a patterned poly silicon layer to first and second areas on a substrate(101); forming a gate insulating layer(112) on the poly silicon layer; forming source and drain areas(134S,134D) doped with first impurities on the poly silicon layer of the first area, and a first conductive metal pattern including a first gate electrode and a conductive layer on the gate insulating layer; forming source and drain areas doped with second impurities on the poly silicon layer of the second area, a lower storage electrode formed by extending a part of the poly silicon layer, and a second conductive metal pattern including a storage line(206) and a second gate electrode; forming an interlayer insulating layer(126) including a storage contact hole(224) on the first and second metal pattern, a storage hole(218), and plural contact holes which the source and drain contact holes(124S,124D) have; and forming the storage contact hole, an upper storage electrode(208) on the storage hole, and source and drain electrodes(108,110) in the source and drain contact holes. |
