| 摘要 |
A semiconductor laser light emitting device (1) is provided with an infrared laser light emitting element (3) wherein a first lower layer clad layer (11), a first active layer (12) and a first upper layer clad layer (13) are stacked; and a red laser light emitting element (4) wherein a second lower layer clad layer (21), a second active layer (22) and a second upper layer clad layer (23) are stacked, on an upper plane of a substrate (2). The first lower layer clad layer (11) is composed of a third lower layer clad layer (17) formed on the entire upper plane of the substrate (2); an etching stop layer (18) formed on the entire plane of a third lower layer clad layer (17); and a fourth lower layer clad layer (19) formed in a region where the infrared laser light emitting element (3) is to be formed on an upper plane of the etching stop layer (18). The second lower layer clad layer (21) is formed in a region on an upper plane of the etching stop layer (18), other than the region wherein the infrared laser light emitting element (3) is to be formed.
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