发明名称 TRANSISTORS WITH FLUORINE TREATMENT
摘要 <p>A semiconductor based device, comprises a plurality of active semiconductor layers experiencing an operating electric (E) field; and a negative ion region (56) within at least one of said plurality of semiconductor layers to counter said operating (E) field.</p>
申请公布号 EP1938385(A2) 申请公布日期 2008.07.02
申请号 EP20060851411 申请日期 2006.07.07
申请人 CREE, INC. 发明人 WU, YIFENG;MOORE, MARCIA;PARIKH, PRIMIT;WISLEDER, TIM
分类号 H01L29/778;H01L21/338;H01L29/20;H01L29/207;H01L29/40 主分类号 H01L29/778
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