| 摘要 |
<p>A non-volatile memory device and a manufacturing method thereof are provided to improve a cycling characteristic and a retention characteristic by forming an ion blocking layer within a floating gate. A gate structure(115) is formed on an upper surface of a substrate(110). An ion blocking layer(118A) is formed within the gate structure at a constant distance from both edges of the gate structure. A tunneling prevention layer is formed within the substrate below the gate structure. The gate structure includes a gate insulating layer(111) formed on the substrate, a floating gate(112) formed on the gate insulating layer, a dielectric layer(113) formed on the floating gate, and a control gate(114) formed on the dielectric layer.</p> |
