| 摘要 |
<p>A method for forming an isolation layer of a non-volatile memory device is provided to improve isolation characteristics of an isolation layer by minimizing an aspect ratio of a trench and burying the isolation within the trench. A first conductive layer for floating gate having a thickness smaller than a target thickness is formed on a substrate(10) including a gate insulating layer(11). A pad nitride layer(14) is formed on the first conductive layer. A trench is formed by etching the pad nitride layer, the first conductive layer, the gate insulating layer, and a part of the substrate. An isolation layer is buried into the trench. The pad nitride layer is removed. A second conductive layer for floating gate is formed on the isolation layer and the first conductive layer. The exposed part of the second conductive layer is removed from the isolation layer so than the total thickness of the first and second conductive layers corresponds to the final target thickness of the floating gate.</p> |
