END POINT DETECTION METHOD APPLYING RESONANCE PHENOMENON, END POINT DETECTION APPARATUS, CHEMICAL MECHANICAL POLISHING APPARATUS ON WHICH THE DETECTION APPARATUS IS LOADED, AND SEMICONDUCTOR DEVICE FABRICATED BY THE CHEMICAL MECHANICAL POLISHING APPARATUS

摘要

An end point detection method using a resonance phenomenon is provided to securely and precisely detect the polishing end point of a conductive layer by monitoring the variation of the thickness of the conductive layer in real time. By using a sensor(37) made of an oscillator circuit like a Colpitts type including a planar inductor and a lumped element capacitor, the variation of the thickness of a conductive layer confronting the planar inductor is monitored in real time from the variation of the oscillation frequency of the sensor. The capacitance of the lumped element capacitor can be variable, and the sensor can select an oscillation frequency band.