| 摘要 |
A power-up circuit in a semiconductor device is provided to compensate variation according to temperature variation. A power supply voltage level follower part(R1,R2) provides a bias voltage corresponding to the level variation of a power supply voltage. A power supply voltage sensing part(MP1,MN1,INV1) senses the variation of the power supply voltage to a threshold level in response to the bias voltage. A gate bias part(20) supplies a constant gate bias voltage to a bias current source transistor supplying a bias current to a sensing node of the power supply voltage sensing part, regardless of temperature variation.
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