发明名称 |
Semiconductor device and method for manufacturing the same |
摘要 |
<p>In a semiconductor device having multilayer wiring, upper metallization layers (405) and elements or lower metallization layers (402) are electrically connected via embedded conductors in contact holes (404). The diameter of the embedded conductors is set larger that the width of the upper metallization layers which they contact. <IMAGE></p> |
申请公布号 |
EP0741410(B1) |
申请公布日期 |
2008.07.02 |
申请号 |
EP19960106938 |
申请日期 |
1996.05.02 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
ONODA, HIROSHI |
分类号 |
H01L21/3205;H01L23/522;H01L21/768;H01L23/52 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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