| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to prevent leakage current by preventing generation of a facet and forming a growth layer through an SEG(Selective Epitaxial Growth) process. A gate electrode(116) is formed on an upper surface of a substrate(110). A first nitride layer(117), an oxide layer(118), and a second nitride layer(119) for gate spacer are sequentially formed along an upper step of the substrate including the gate electrode. A spacer(120) is formed on both sidewalls of the gate electrode by etching the second nitride layer, the oxide layer, and the first nitride layer. A growth layer is formed by growing the substrate exposed to the spacer. The process for manufacturing spacers includes a process for recessing the substrate to a predetermined thickness.</p> |
