| 摘要 |
A method for manufacturing a semiconductor device is provided to reduce a final inspection critical dimension of an etch target layer pattern in a low-pattern-density region by etching an etch target layer. An etch target layer is formed on a substrate(10) including a first and second regions. The process for forming the etching target layer includes a process for forming a gate insulating layer(11) on the substrate, a process for forming a gate conduction layer(12) on the gate insulating layer, and a process for forming a gate metal layer(13) on the gate conduction layer. A hard mask is formed on the etch target layer. A first hard mask pattern and a second hard mask pattern are formed on the first region and the second region by etching the hard mask. The width of the second hard mask pattern of the second region is reduced. The etch target layer is etched by using the first and second hard mask patterns as etch barrier layers. |
