| 摘要 |
A method for forming a metal line of a semiconductor device is provided to prevent degradation and re-adsorption of particles by forming the metal line at the same time as performing rinsing using hydrogen reduction water to reinforce minus surface charges on a wafer surface and polluted particles. An insulating layer(203), a contact hole, a barrier layer(207) and a contact plug(205a) are formed sequentially on a substrate. A metal layer(211) and an ARC(Anti-Reflective Coating) layer(213) are formed on the contact plug and the barrier layer. A photoresist pattern for defining a metal line region is formed on the ARC layer. The ARC layer, the metal layer, and the barrier layer are patterned by performing RIE(Reactive Ion Etching). A cleaning process is performed by using solvent. The residues of the solvent are rinsed by using hydrogen reduction wafer, and then a metal line is formed by performing a dry process.
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