| 摘要 |
A CMOS image sensor and a manufacturing method thereof are provided to improve an operation property of the image sensor by increasing a gate-on depletion region to lower a potential barrier. A CMOS(Complementary Metal Oxide Semiconductor) image sensor includes a gate electrode(105), a photodiode region(107), and a floating diffusion region(110). A gate insulation film is applied at a predetermined region on a semiconductor substrate. One lower edge of the gate electrode is extended to one side of the gate insulation film. The photodiode region is formed on the semiconductor substrate surface at one side of the gate electrode. The floating diffusion region is formed on the semiconductor substrate surface at the other side of the gate electrode.
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