METHOD OF FORMING A SEMICONDUCTOR DEVICE

摘要

A method for forming a semiconductor device is provided to restrict void within a conductive layer when filling up the recesses and openings with the conductive layer by forming the upper portion of the recess whose width is same or smaller than the openings. A silicon layer and a nitride layer pattern having a first aperture exposing the silicon layer are formed on a substrate having a reclaimed oxide pattern. A silicon pattern having a second aperture(124) exposing the substrate is formed by etching the silicon layer using the nitride pattern as an etch mask. A third aperture is formed by performing the isotropic etching to the silicon pattern. A recess(130) is formed within the reclaimed oxide pattern by performing anisotropic etching. The recess is expanded by etching a part of the exposed oxide pattern. A gate insulation layer(134) is formed by performing oxidation to the substrate, a side surface of the silicon pattern, and an inner side of the recess. A gate conductor layer filling up the recess is formed.