| 摘要 |
A method of fabricating a semiconductor device is provided to protect an inner wall of a trench by not performing an oxidization process which improves a deposition characteristic of polycrystalline silicon. A first hard mask(102) is formed on a substrate(100), and then the substrate is etched to form a trench(105). A polycrystalline silicon layer is formed on the substrate with the first trench. The polycrystalline silicon layer is oxidized, and then the oxidized polycrystalline silicon layer is removed from a bottom surface of the first trench is expose the substrate. The exposed substrate is etched to form a second trench(106). After the step of oxidizing the polycrystalline silicon layer, a second hard mask is formed to prevent excessive loss of the oxidized polycrystalline silicon layer.
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