MULTI-BIT ELECTRO-MECHANICAL MEMORY DEVICE AND METHOD MANUFACTURING THE SAME

摘要

A multi-bit electro-mechanical memory device and a manufacturing method thereof are provided to increase or maximize an integration degree thereof by forming a cell array of a matrix type. A substrate(10) includes a predetermined flat surface. A lower bit line(20) is formed in a first direction on the substrate. A lower word line(30) and a trap site(80) are formed in a second direction. The second direction crosses the lower bit line. A pad electrode is insulated from the lower word line and a sidewall of the trap site and is connected to the lower bit line. A cantilever electrode(50) is positioned in the first direction at an upper part from the trap site in order to form a lower air gap therebetween. The cantilever electrode is connected to the pad electrode and is curved in a third direction in order to be in contact with the trap site by electric field induced from electric charges applied to the lower word line. An upper word line(40) is formed in the second direction and has an upper gap from the upper bit line.