发明名称 |
Semiconductor device including a multi-channel fin field effect transistor including protruding active portions and method of fabricating the same |
摘要 |
In a semiconductor device, and a method of fabricating the same, the semiconductor device includes a semiconductor substrate having a cell region and a peripheral circuit region, a portion of the semiconductor substrate in the cell region and in the peripheral circuit region including an isolation region defining an active region, a portion of the active region protruding above an upper surface of the isolation region to define at least two active channels, a gate dielectric layer formed over the active region of the semiconductor substrate including the at least two protruding active channels, a gate electrode formed over the gate dielectric layer and the isolation region of the semiconductor substrate, and a source/drain region formed in the active region of the semiconductor substrate on either side of the gate electrode.
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申请公布号 |
US7394116(B2) |
申请公布日期 |
2008.07.01 |
申请号 |
US20050033526 |
申请日期 |
2005.01.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM SUNGMIN;PARK DONGGUN;YOON EUNJUNG;JANG SEMYEONG;KIM KEUNNAM;OH YONGCHUL |
分类号 |
H01L29/76;H01L21/336;H01L21/84;H01L27/12;H01L29/745;H01L29/78;H01L29/786 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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