| 摘要 |
Embodiments relate to a method of manufacturing a semiconductor device. According to embodiments, the method may include forming a first and a second insulating layer on a semiconductor substrate of which an active area and an isolation region are defined, forming a first and a second insulating layer pattern by selectively removing the first and the second insulating layer to expose the isolation region of the semiconductor substrate, forming a trench having a prescribed depth by selectively removing the semiconductor substrate by using the first and the second insulating layer pattern as a mask, forming an isolation layer as a third insulating layer in the trench, removing a prescribed thickness of the isolation layer from the surface portion through etching the whole semiconductor substrate while remaining at the side portions of the first and second insulating layer pattern and the active area as a side wall shape, removing the first and the second insulating layer pattern, and removing a prescribed thickness of the isolation layer from the surface portion to protrude the active area of the semiconductor substrate.
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