| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to improve external appearance of the semiconductor device by covering fine pits in a pad exposure process. A pad(33) is formed on a lower substrate(10). A protective layer(40,50) is formed on the pad. The pad is exposed by patterning the protective layer. A compensatory layer is laminated on the protective layer in order to cover the exposed surface of the pad, where the compensatory layer is composed of a silicon oxide layer. A silicon nitride layer is laminated on the compensatory layer. An etching process is performed to remove the silicon nitride layer. The compensatory layer is etched until the pad component is detected.</p> |
