发明名称 Set of at least two masks for the projection of structure patterns
摘要 A set of at least two masks, coordinated with one another, for the projection of structure patterns, into the same photosensitive layer arranged on a semiconductor wafer. The first mask includes a semitransparent or nontransparent first layer, which is arranged on a first substrate and in which at least one first opening is formed at a first position, the first opening having a first lateral dimension, which is greater than the resolution limit of a projection system for the projection of the structure patterns. The second mask includes a semitransparent or nontransparent second layer, which is arranged on a second substrate and in which at least one dummy structure assigned to the first opening is formed at a second position, the dummy structure having a second lateral dimension, which is smaller than the resolution limit of the projection system wherein the first position on the first mask corresponds to the second position on the second mask.
申请公布号 US7393613(B2) 申请公布日期 2008.07.01
申请号 US20040791763 申请日期 2004.03.04
申请人 INFINEON TECHNOLOGIES AG 发明人 DETTMANN WOLFGANG;THIELE JOERG;PFORR RAINER;HENNIG MARIO;ZEILER KARSTEN
分类号 G03F1/00;G03F1/14;G03F7/20 主分类号 G03F1/00
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