METHOD FOR FABRICATING METAL LINE OF SEMICONDUCTOR DEVICE

摘要

A method for forming a metal line of a semiconductor device is provided to prevent generation of a metal recess by using different polishing agents. A first interlayer dielectric(109) is formed on the entire surface of a semiconductor substrate(101). A contact hoe is formed by removing the first interlayer dielectric selectively. A contact plug(111) is formed inside the contact hole. A second interlayer dielectric(112) is formed on the entire surface of the semiconductor substrate. A via hole is formed by removing the second interlayer dielectric selectively. A metal layer(114) is formed on the entire surface of the semiconductor substrate including the via hole. A first polishing process is performed on the metal layer. A metal line is formed by performing a second polishing process.