| 摘要 |
A dual source MOSFET comprises a large number of cells diffused into a substrate. The cells are divided into two regions with separate sources and gates but having a common drain connection, the substrate. It is preferred that the source regions be highly interdigitated so that the current at the silicon to metal interface is sufficiently diffuse so that the source from which it originated is indistinguishable, and in switching from one source to the other causes no significant difference in the current density or distribution at the drain connection, provided that the sum of the source currents is constant. The same construction provides a superior ac switch, though no drain connection is needed.
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