发明名称 |
Non-volatile memory device having a charge storage oxide layer and operation thereof |
摘要 |
A non-volatile memory device includes a pair of source/drain regions disposed in a semiconductor substrate, having a channel region between them. A charge storage oxide layer is disposed on the channel region and overlaps part of each of the pair of source/drain regions. A gate electrode is disposed on the charge storage oxide layer. At least one halo implantation region is formed in the semiconductor substrate adjacent to one of the pair of source/drain regions, and overlapping the charge storage oxide layer. A program operation is performed by trapping electrons in the charge storage oxide layer located near the source/drain region where the halo ion implantation region is formed, and an erase operation is performed by injecting holes into the charge storage oxide layer located near the source/drain region where the halo ion implantation region is formed.
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申请公布号 |
US7394127(B2) |
申请公布日期 |
2008.07.01 |
申请号 |
US20050047764 |
申请日期 |
2005.02.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM KI-CHUL;BAE GEUM-JONG;LEE BYOUNG-JIN;KIM SANG-SU |
分类号 |
H01L27/115;H01L29/788;H01L21/28;H01L21/336;H01L21/8242;H01L29/792 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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