发明名称 |
Ferroelectric random access memory device, display drive IC and electronic equipment |
摘要 |
A ferroelectric memory device being short in the bit line direction. The ferroelectric memory device is structured including a first word line extending in the first direction; a plurality of element regions arrayed in the first direction on both sides of the first word line; a plurality of ferroelectric capacitors connected to the respective element regions and driven by the first word line. Each of the element regions preferably has a stair-like shape when seen in a plane view and the first word line is preferably arranged bent between the element regions.
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申请公布号 |
US7394677(B2) |
申请公布日期 |
2008.07.01 |
申请号 |
US20060455295 |
申请日期 |
2006.06.16 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
MURAKAMI YASUHIKO;KOIDE YASUNORI |
分类号 |
G11C11/22 |
主分类号 |
G11C11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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