发明名称 Architecture for ribbon ion beam ion implanter system
摘要 An architecture for a ribbon ion beam ion implanter system is disclosed. In one embodiment, the architecture includes an acceleration/deceleration parallelizing lens system for receiving a fanned ribbon ion beam and for at least parallelizing (and perhaps also accelerate or decelerate) the fanned ribbon ion beam into a substantially parallel ribbon ion beam, and an energy filter system downstream from the acceleration/deceleration parallelizing lens system and prior to a work piece to be implanted by the substantially parallel ribbon ion beam. The acceleration/deceleration parallelizing lens system includes lenses for at least parallelizing (and perhaps also accelerate or decelerate) the fanned ribbon ion beam and acceleration/deceleration lenses for accelerating or decelerating the substantially parallel ribbon ion beam. The parallelizing lens allows delivery of a high current ribbon ion beam to the work piece with energy that can extend down to as low as approximately 200 eV. The energy filter system provides a substantially parallel ribbon ion beam that is substantially free of energy contamination.
申请公布号 US7394079(B2) 申请公布日期 2008.07.01
申请号 US20060275772 申请日期 2006.01.27
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 SAADATMAND KOUROSH;KELLERMAN PETER L.
分类号 H01J37/317 主分类号 H01J37/317
代理机构 代理人
主权项
地址