发明名称 Process for producing layer structures for signal distribution
摘要 Structures for signal distribution are produced by applying a metallic seed layer over a semiconductor body. An insulating layer is applied over the metallic seed layer and openings in the insulating layer are produced by photolithographic patterning of the insulating layer. Each opening in the insulating layer is trapezoidal in cross section such that an upper portion of the insulating layer is wider than a lower portion of the insulating layer. A conductor is selectively formed over exposed portions of the metallic seed layer. After selectively forming the conductor, the insulating layer is anisotropically etched such that portions of the insulating layer abutting sidewalls of the conductor remain. Alternatively, a second insulating layer can be formed and anisotropically etched.
申请公布号 US7393782(B2) 申请公布日期 2008.07.01
申请号 US20050051548 申请日期 2005.02.04
申请人 INFINEON TECHNOLOGIES AG 发明人 BRINTZINGER AXEL;TROVARELLI OCTAVIO;LEIBERG WOLFGANG
分类号 H01L21/44;H01L21/4763;H01L21/768 主分类号 H01L21/44
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