| 摘要 |
An organic light emitting diode and a method for manufacturing the same are provided to apply low resistance metal to a second gate pattern layer by not exposing the second gate pattern layer to a high temperature process such as solid phase crystallization or chemical vapor deposition. An organic light emitting diode includes a first gate pattern layer, a second gate pattern layer, a first insulating layer, and a data pattern layer. The first gate pattern layer has first and second gate electrodes(G1,G2) composed of a first metal layer, a first insulating pattern partially formed on the first gate electrode, a first active layer(A1) stacked on the first insulating pattern, a second insulating pattern partially formed on the second gate electrode, and a second active layer(A2) stacked on the second insulating pattern. The second gate pattern layer is composed of a second metal layer and has a gate line(GL) and a third gate electrode(G3) protruded from the gate line to be adjacent to the first gate electrode. The first insulating layer is formed on a substrate, where the second gate pattern layer is formed, and has first and second holes to expose the first and second active layers respectively. The data pattern layer is formed on the first insulating layer, composed of a third metal layer, and has a data line and a power line(VL). |
