发明名称 IMPRINT MASK AND METHOD FOR FABRICATING MICRO LENS OF IMAGE SENSOR
摘要 <p>An imprint mask and a method of manufacturing a microlens for an image sensor using the same are provided to increase a light condensing efficiency of an image sensor by forming the microlens with a normal dome. A first photoresist pattern(102) is formed on a quartz(101), and then the quartz is etched by using the first photoresist pattern as an etch barrier. After that, the first photoresist pattern is removed. A second photoresist pattern is formed on the quartz so as to apply a damascene process, and then the quartz is etched by using the second photoresist pattern. After that, the second photoresist pattern is removed. A third photoresist pattern is formed on the quartz, and then the quartz is etched by using the third photoresist pattern. After that, the third photoresist pattern is removed to obtain the embossed or depressed quartz.</p>
申请公布号 KR20080059926(A) 申请公布日期 2008.07.01
申请号 KR20060133871 申请日期 2006.12.26
申请人 MAGNACHIP SEMICONDUCTOR, LTD. 发明人 KIM, HONG IK
分类号 H01L27/146;H01L21/027 主分类号 H01L27/146
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