发明名称 Semiconductor integrated circuit
摘要 A semiconductor integrated circuit with low power consumption is provided. In one embodiment, the semiconductor integrated circuit includes a logic circuit portion that is connected between a first power line and a virtual ground line. The logic circuit portion includes at least one NMOS transistor having a first threshold voltage and at least one PMOS transistor having a second threshold voltage. The semiconductor integrated circuit further includes a first MOS transistor, which is connected between the virtual ground line and a ground voltage, where the first MOS transistor has the first threshold voltage and applies the ground voltage to the virtual ground line in an active state. Also included in the semiconductor integrated circuit is a controller that is connected to the first MOS transistor, where the controller applies the ground voltage to the first MOS transistor in the active state and applies a bulk voltage supplied from a bulk power line in a standby state to control a threshold voltage of the first MOS transistor.
申请公布号 US7394290(B2) 申请公布日期 2008.07.01
申请号 US20060422856 申请日期 2006.06.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SEO YOUNG-HUN;CHOI JONG-HYUN
分类号 H03K19/0175 主分类号 H03K19/0175
代理机构 代理人
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