| 摘要 |
A method of gap-filling a trench in a semiconductor device is provided to reduce an aspect ratio of the trench by introducing a gas mixed with HBr gas, Cl2 gas and O2 gas at an etching process of the trench. A trench(14) is formed in a semiconductor substrate(11), and then a first HDP(High Density Plasma) oxide layer(18) is deposited in the trench to gap-fill a portion of the trench. The first HDP oxide layer is partially etched by plasma using a gas mixed with HBr gas, Cl2 gas and O2 gas to easily gap-fill the trench. A second HDP oxide layer is deposited on the first HDP oxide layer, in which a portion of the first HDP oxide layer is etched, to fully gap-fill the trench.
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