| 摘要 |
An indium ion implanting method for fabricating a semiconductor device is provided to minimize diffusion of the indium ion by commonly performing carbon ion implantation when indium ion is implanted. A substrate is subjected to at least one ion implantation by using carbon ion as a dopant to adjust diffusion of indium ion. The substrate is subjected to ion implantation by using the indium ion as a dopant. The substrate is subjected to an annealing process after the ion implantation. The step of implanting the carbon ion is performed before the step of implanting the indium ion, and is performed two times by using different ion implantation energy and an amount of ion implantation.
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