| 摘要 |
<p>An optical proximity correction method for a dual polysilicon gate is provided to enhance performance of a semiconductor device by controlling line widths of gates of transistors accurately irrespective of the type of MOS transistors. A layout of first gates(310) for PMOS transistor and a layout of second gates(330) for NMOS transistor are designed. First etch biases are measured according to line widths of the first gates in an etch process for the first gates. Second etch biases are measured according to line widths of the second gates in an etch process for the second gates. Etch biases for first and second gates are extracted from the line widths and the first and second etch biases. Line control widths(313,333) are extracted to compensate the extracted etch biases. The line widths are re-adjusted by adding the line widths to the layouts of the first and second gates. An optical proximity correction process for the layouts of the re-adjusted first and second gates is performed.</p> |
