| 摘要 |
A method for forming a fine contact hole pattern of a semiconductor device is provided to omit an aligning process between an upper layer and a lower layer by forming a fine pattern in a self-aligned manner. An etching target layer(110), a first hard mask layer, and a second hard mask layer pattern(130a) for defining a first contact hole are formed on a substrate(100). A metal layer spacer(160a) is formed on a sidewall of the second hard mask layer pattern. A first hard mask layer pattern(120a) for defining a second contact hole(165) is formed by etching the first hard mask layer. The second hard mask layer pattern and the metal layer spacer are removed. The etching target layer is etched by using the first hard mask layer pattern as a mask. A contact hole pattern is formed by etching the etching target layer.
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