| 摘要 |
A method for manufacturing a semiconductor device is provided to improve characteristics of the semiconductor device by reducing a contact resistance and preventing a fail of the semiconductor device. An interlayer dielectric is formed on the upper surface of a semiconductor substrate including a first storage node contact(110). An interlayer dielectric pattern for defining a second storage node contact hole(140) is formed by etching the interlayer dielectric. An ion implantation process is performed to implant ions into the residual interlayer dielectric of the bottom part of the second storage node contact hole. A polysilicon layer is formed on the resultant. A second storage node contact is formed by planarizing the polysilicon layer.
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