Formation of nitrogen containing dielectric layers having a uniform nitrogen distribution therein using a high temperature chemical treatment

摘要

The present invention provides a method for manufacturing a gate dielectric, a method for manufacturing a semiconductor device, and a method for manufacturing an integrated circuit. The method for manufacturing the gate dielectric, without limitation, may include forming a nitrided dielectric layer ( 520 ) over a substrate ( 310 ), the nitrided dielectric layer ( 520 ) having a non-uniformity of nitrogen in a bulk thereof, and removing at least a portion of the nitrided dielectric layer ( 520 ) using a high temperature chemical treatment, the removing reducing the non-uniformity.