| 摘要 |
A method of forming a sidewall spacer in a semiconductor device is provided to prevent sag of a center portion of a silicon nitride layer by isotropic etching of the sidewall spacer. A gate is formed on a substrate(200), and then an oxide layer is formed on the entire surface of the substrate(210). A silicon nitride layer formed on the oxide layer(220), and then the substrate is subjected to plasma treatment(230). The silicon nitride layer processed by the plasma is subjected to wet etching to form a sidewall spacer(240). When the sidewall spacer is formed, a critical dimension of the sidewall spacer is adjusted by controlling a thickness of a nitride and overetch target.
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