| 摘要 |
<p>A contact lithography apparatus 100, 220, system 200 and method 300 use a deformation 320 to facilitate pattern transfer 300. The apparatus 100, 220, system 200 and method 300 include a spacer 120, 226 that provides a spaced apart parallel and proximal orientation 310 of lithographic elements, such as a mask 110, 228a, 222 and a substrate 130, 228b, 224, when in mutual contact with the spacer 120, 226. One or more of the mask 110, 228a, 222, the substrate 130, 228b, 224 and the spacer 120, 226 is deformable, such that deformation 320 thereof facilitates the pattern transfer 300.</p> |
