| 摘要 |
A CLEANING SOLUTION, METHOD, AND APPARATUS FOR CLEANING SEMICONDUCTOR SUBSTRATES AFTER CHEMICAL MECHANICAL POLISHING OF COPPER FILMS IS DESCRIBED. THE PRESENT INVENTION INCLUDES A CLEANING SOLUTION WHICH COMBINES DEIONIZED WATER, AN ORGANIC COMPOUND, AND AN AMMONIUM COMPOUND IN AN ACIDIC PH ENVIRONMENT FOR CLEANING THE SURFACE OF A SEMICONDUCTOR SUBSTRATE AFTER POLISHING A COPPER LAYER. SUCH METHODS OF CLEANING SEMICONDUCTOR SUBSTRATES AFTER COPPER CMP ALLEVIATE THE PROBLEMS ASSOCIATED WITH BRUSH LOADING AND SURFACE AND SUBSURFACE CONTAMINATION.(FIG 3)
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