Phase change memory device with fine contact point and Method of fabricating the same,申请号KR20060123401-传众专利搜索

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发明名称	Phase change memory device with fine contact point and Method of fabricating the same
摘要
申请公布号	KR100842274(B1)	申请公布日期	2008.06.30
申请号	KR20060123401	申请日期	2006.12.06
申请人		发明人
分类号	H01L21/8247;H01L27/115	主分类号	H01L21/8247
代理机构		代理人
主权项
地址

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