发明名称 |
WAFER LEVEL PACKAGE WITH DIE RECEIVING CAVITY AND METHOD OF THE SAME |
摘要 |
Wafer Level Package with Die Receiving Cavity and Method of the Same The present invention provides a structure of package comprising a substrate with a die receiving cavity formed within an upper surface of the substrate and a through hole structure formed there through, wherein a terminal pad is formed under the through hole structure and the substrate includes a conductive trace formed on a lower surface of the substrate. A die is disposed within the die receiving cavity by adhesion and a dielectric layer formed on the die and the substrate. A re-distribution metal layer (RDL) is formed on the dielectric layer and coupled to the die and the through hole structure. Conductive bumps are coupled to the terminal pad. |
申请公布号 |
SG143185(A1) |
申请公布日期 |
2008.06.27 |
申请号 |
SG20070179260 |
申请日期 |
2007.11.19 |
申请人 |
ADVANCED CHIP ENGINEERING TECHNOLOGY INC. |
发明人 |
YANG WEN-KUN;CHANG JUI-HSIEN |
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