| 摘要 |
<p>SILICON WAFER AND METHOD FOR MANUFACTURING THE SAME To provide a silicon wafer which can suppress both slip dislocation and occurrence of warpage in a device manufacturing process and a method for manufacturing the same. In a silicon wafer including plate-shaped BMDs, a density of BMDs whose diagonal lengths are in a range of 10nm to 120nm, of BMDs present at a deep position which is inwardly spaced from a surface of a silicon wafer by a distance of 500μm or more, is 1 X 1011/cm3 or more, a density of BMDs whose diagonal lengths are 750nm or more, of BMDs present at a deep position which is inwardly spaced from a surface of a silicon wafer by a distance of 50μm or more is 1 X 107/cm3 or less, and an interstitial oxygen concentration is 5 X 1017 atoms/cm3 or less.</p> |
