| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To accomplish a semiconductor device for electrostatic protection in an SCR structure having high holding voltage characteristics. <P>SOLUTION: In a semiconductor device for electrostatic protection in a two-way SCR structure formed on an SOI substrate, an embedded n<SP>+</SP>-type region 12 is formed on an embedded insulating film 11, and an anode p-type region 20 and a cathode p-type region 21 comprise extension regions 20a, 21a. By adjusting a length Lp of the extension regions 20a and 21a and a longitudinal distance Ly from the anode p-type region 20 and the cathode p-type region 21 to the embedded n<SP>+</SP>-type region 12, desired holding voltage resistance characteristics can be obtained and by adjusting a distance L between the anode p-type region 20 and the cathode p-type region 21, a desired operation starting voltage value can be obtained. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
