发明名称 METHOD FOR MANUFACTURING DEVICE ON SEMICONDUCTOR SUBSTRATE, AND SYSTEM FOR MANUFACTURING SEMICONDUCTOR DEVICE OF WAFER BASE ON SUBSTRATE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method and the like capable of preventing problems with regard to a contact printing method to form a doped region inexpensively. <P>SOLUTION: The method for manufacturing a device on the semiconductor substrate 101 includes a step that extrudes a first dopant contained material containing a first dopant type first dopant onto a surface 102 of the substrate 101, thereby forming first extruded structures 120-1 to 120-4 on first surface regions 102-1 to 102-4 of the substrate 101 of the first dopant contained material and a step that heats the substrate 101 to diffuse the first dopant from the surface regions 102-1 to 102-4 to an inside of the substrate 101, thereby forming the first doped regions 101-1 to 101-4 of the substrate 101. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2008147660(A) 申请公布日期 2008.06.26
申请号 JP20070314993 申请日期 2007.12.05
申请人 PALO ALTO RESEARCH CENTER INC 发明人 DAVID K FALK;SHRADER ERIC J
分类号 H01L21/225;H01L31/04 主分类号 H01L21/225
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