发明名称 |
METHOD FOR MANUFACTURING DEVICE ON SEMICONDUCTOR SUBSTRATE, AND SYSTEM FOR MANUFACTURING SEMICONDUCTOR DEVICE OF WAFER BASE ON SUBSTRATE |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method and the like capable of preventing problems with regard to a contact printing method to form a doped region inexpensively. <P>SOLUTION: The method for manufacturing a device on the semiconductor substrate 101 includes a step that extrudes a first dopant contained material containing a first dopant type first dopant onto a surface 102 of the substrate 101, thereby forming first extruded structures 120-1 to 120-4 on first surface regions 102-1 to 102-4 of the substrate 101 of the first dopant contained material and a step that heats the substrate 101 to diffuse the first dopant from the surface regions 102-1 to 102-4 to an inside of the substrate 101, thereby forming the first doped regions 101-1 to 101-4 of the substrate 101. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
申请公布号 |
JP2008147660(A) |
申请公布日期 |
2008.06.26 |
申请号 |
JP20070314993 |
申请日期 |
2007.12.05 |
申请人 |
PALO ALTO RESEARCH CENTER INC |
发明人 |
DAVID K FALK;SHRADER ERIC J |
分类号 |
H01L21/225;H01L31/04 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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