| 摘要 |
A semiconductor memory device includes a first circuit which generates a first potential lower than the external power supply voltage, a second circuit which generates a second potential lower than the first potential, a capacitor charged to the first potential, a bit line connected to a memory cell, a sense amplifier which performs sense operation to amplify a potential on the bit line to the second potential, and a connection control circuit which connects the first circuit to the sense amplifier within a first time period from a start of the sense operation, and which connects the second circuit to the sense amplifier after the lapse of the first time period. The first circuit is enabled before the start of the sense operation and is disabled after the completion of charging of the capacitor, and the output of the first circuit is thereby set in a floating state.
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