发明名称 METHOD AND DEVICE FOR MEASURING CRYSTALLIZATION RATE
摘要 PROBLEM TO BE SOLVED: To provide a method of measuring the crystallization rate of a semiconductor thin film, with high accuracy and in a short time. SOLUTION: The crystallization rate of a semiconductor thin film is measured, wherein a light L2 is emitted to the semiconductor thin film formed on a substrate; the light L2 including a wavelength that causes optical coherent resonance between the semiconductor thin film and the substrate; and then the intensity of transmitted light L3 of the light or the intensity of the reflected light of the light is measured. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008147578(A) 申请公布日期 2008.06.26
申请号 JP20060336021 申请日期 2006.12.13
申请人 TOKYO UNIV OF AGRICULTURE & TECHNOLOGY 发明人 SAMEJIMA TOSHIYUKI;ANDO NOBUYUKI
分类号 H01L21/20;H01L21/336;H01L29/786 主分类号 H01L21/20
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