发明名称 |
METHOD AND DEVICE FOR MEASURING CRYSTALLIZATION RATE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of measuring the crystallization rate of a semiconductor thin film, with high accuracy and in a short time. SOLUTION: The crystallization rate of a semiconductor thin film is measured, wherein a light L2 is emitted to the semiconductor thin film formed on a substrate; the light L2 including a wavelength that causes optical coherent resonance between the semiconductor thin film and the substrate; and then the intensity of transmitted light L3 of the light or the intensity of the reflected light of the light is measured. COPYRIGHT: (C)2008,JPO&INPIT |
申请公布号 |
JP2008147578(A) |
申请公布日期 |
2008.06.26 |
申请号 |
JP20060336021 |
申请日期 |
2006.12.13 |
申请人 |
TOKYO UNIV OF AGRICULTURE & TECHNOLOGY |
发明人 |
SAMEJIMA TOSHIYUKI;ANDO NOBUYUKI |
分类号 |
H01L21/20;H01L21/336;H01L29/786 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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地址 |
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