| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which suppresses more than ever a breakdown caused by an applied surge. SOLUTION: The semiconductor device 1 includes a diode 5 for input protection on a thin film SOI layer 40 of a thin film SOI substrate 10. The surge is applied through either an electrode 50a electrically connected to a high-concentration P type region 41 which constitutes the diode 5, or an electrode 50b electrically connected to a high-concentration N type region 42 which constitutes the diode 5 similarly, and the surge flows into the thin film SOI layer 40 toward the other electrode of these both electrodes 50a and 50b, by which heat is generated in the thin film SOI layer 40. The heat is absorbed through a phase change of a heat absorption member 60. COPYRIGHT: (C)2008,JPO&INPIT
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