| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of evaluating semiconductor wafers, capable of more accurately evaluating semiconductor wafers, by easily and more precisely measuring the junction leakage current. SOLUTION: The method of evaluating a semiconductor wafer includes steps of forming an oxide film, on at least the surface of a semiconductor wafer, removing a part of the oxide film to form a window; diffusing dopant, having a conductivity type different from the conductivity type of the semiconductor wafer to be evaluated through the window; forming a diffusion section in the semiconductor to be evaluated to form a P-N junction; measuring a leakage current value I<SB>0</SB>at 0 V bias and a leakage current value I<SB>1</SB>in reverse bias application; calculating the differenceΔI=I<SB>1</SB>-I<SB>0</SB>, between the leakage current value I<SB>1</SB>in the reverse bias application and the leakage current value I<SB>0</SB>at 0 V bias; and evaluating the semiconductor wafer on the basis of the calculatedΔI. COPYRIGHT: (C)2008,JPO&INPIT
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