| 摘要 |
A semiconductor device, including: a semiconductor substrate; a first gate insulation film installed on the semiconductor substrate; a first gate electrode installed on the first insulation film; a silicon oxide film, installed beneath a periphery of the first gate electrode, being thicker than the first gate insulation film; a source and a drain installed on the semiconductor substrate; an interlayer insulation film installed above the semiconductor substrate; a pad electrode installed on the interlayer insulation film; a passivation film, installed on the pad electrode, having an orifice above the pad electrode; and a bump electrode, installed in the orifice, located vertically above the part of or the entire first gate electrode.
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